- FET Feature：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Operating Temperature：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Vgs(th) (Max) @ Id：
-
2 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 800V 11.... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N CH 600V 11.... |
35,000
In-stock
|
Buy Now Get Quote |
