Drain to Source Voltage (Vdss):
Drive Voltage (Max Rds On, Min Rds On):
FET Type:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
TPCA8010-H(TE12L,Q Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 200V 5.5...
RFQ
35,000
In-stock
Get Quote
TPCA8010-H(TE12LQM Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 200V 5.5...
RFQ
35,000
In-stock
Get Quote
RP1L055SNTR ROHM Semiconductor
MOSFET N-CH 60V 5.5A...
RFQ
35,000
In-stock
Get Quote
TPCP8J01(TE85L,F,M Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 32V 5.5A...
RFQ
35,000
In-stock
Get Quote
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