- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
50 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
onsemi | SIC MOS TO247-4L 22M... |
184
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 29... |
227
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SILICON CARBIDE ... |
192
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 900V 118... |
259
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 10... |
1,459
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 17... |
438
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 60... |
871
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 17... |
450
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SIC MOS TO247-3L 650V |
450
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SILICON CARBIDE ... |
285
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SIC MOS TO247-4L 650V |
450
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 19... |
585
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 19... |
661
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 30... |
795
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SILICON CARBIDE ... |
690
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 900V 9.8... |
345
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SILICON CARBIDE ... |
50
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 30... |
85
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | SICFET N-CH 1200V 60... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | TRANS SJT N-CH 1200... |
35,000
In-stock
|
Buy Now Get Quote |
