Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Supplier Device Package:
Image Part Manufacturer Description Stock Action
TK50P03M1(T6RSS-Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 50A...
RFQ
35,000
In-stock
Get Quote
TK40P04M1(T6RSS-Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 40V 40A...
RFQ
35,000
In-stock
Get Quote
TK45P03M1,RQ(S Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 45A...
RFQ
35,000
In-stock
Get Quote
1 / 1 Page, 3 Records