Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Supplier Device Package:
Image Part Manufacturer Description Stock Action
TK4R4P06PL,RQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CHANNEL...
RFQ
7
In-stock
Buy Now Get Quote
TK90S06N1L,LXHQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 60V 90A...
RFQ
35,000
In-stock
Buy Now Get Quote
TK90S06N1L,LQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 60V 90A...
RFQ
35,000
In-stock
Buy Now Get Quote
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