Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C：

Drain to Source Voltage (Vdss)：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Power Dissipation (Max)：

Rds On (Max) @ Id, Vgs：

Supplier Device Package：

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2 Records

Image	Part	Manufacturer	Description		Stock	Action
	TK50P04M1(T6RSS-Q)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 40V 50A...	PDF RFQ	35,000 In-stock	Get Quote
	TK60P03M1,RQ(S	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 30V 60A...	PDF RFQ	35,000 In-stock	Get Quote

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