Drain to Source Voltage (Vdss):
FET Type:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
SSM3J130TU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 20V 4.4A...
RFQ
261,862
In-stock
Buy Now Get Quote
SSM3J140TU,LXHF Toshiba Electronic Devices and Storage Corporation
SMOS P-CH VDSS:-20V...
RFQ
400
In-stock
Buy Now Get Quote
SSM3J140TU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 20V 4.4A...
RFQ
35,000
In-stock
Buy Now Get Quote
DMT12H060LFDF-13 Diodes Incorporated
MOSFET BVDSS: 101V...
RFQ
35,000
In-stock
Buy Now Get Quote
DMT12H060LFDF-7 Diodes Incorporated
MOSFET BVDSS: 101V...
RFQ
35,000
In-stock
Buy Now Get Quote
1 / 1 Page, 5 Records