- Manufacturer：
-
- onsemi (1)
- PANJIT (3)
- Rectron USA (1)
- Drain to Source Voltage (Vdss)：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs (Max)：
-
- Vgs(th) (Max) @ Id：
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15 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
ROHM Semiconductor | MOSFET P-CH 30V 2A ... |
6,000
In-stock
|
Buy Now Get Quote | ||
|
|
onsemi | N-CHANNEL POWER ... |
3,995
In-stock
|
Buy Now Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | X35 PB-F POWER MOS... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Rectron USA | MOSFET N-CHANNEL... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
PANJIT | 700V N-CHANNEL MOS... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Harris Corporation | P-CHANNEL POWER M... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
PANJIT | 600V N-CHANNEL MOS... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
PANJIT | 1000V N-CHANNEL MOS... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 2A... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
ROHM Semiconductor | MOSFET N-CH 600V 2A... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 2A... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Intersil (Renesas Electronics Corporation) | MOSFET N-CH 200V 2A... |
35,000
In-stock
|
Get Quote | ||
|
|
Intersil (Renesas Electronics Corporation) | MOSFET N-CH 600V 2A... |
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 2A... |
35,000
In-stock
|
Get Quote |
