Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Power Dissipation (Max)：

Rds On (Max) @ Id, Vgs：

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3 Records

Part	Manufacturer	Description		Stock	Action
TK4A60D(STA4,Q,M)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 4A...	PDF RFQ	35,000 In-stock	Get Quote
TK4A60DA(STA4,Q,M)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 3.5...	PDF RFQ	35,000 In-stock	Get Quote
TK4A60DB(STA4,Q,M)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 600V 3.7...	PDF RFQ	35,000 In-stock	Get Quote

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