Drain to Source Voltage (Vdss):
FET Type:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
2SK3309(TE24L,Q) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 450V 10A...
RFQ
35,000
In-stock
Get Quote
RP1E100RPTR ROHM Semiconductor
MOSFET P-CH 30V 10A...
RFQ
35,000
In-stock
Get Quote
NDDP010N25AZT4H onsemi
MOSFET N-CH 250V 10A...
RFQ
35,000
In-stock
Get Quote
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