Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
TK110E10PL,S1X Toshiba Electronic Devices and Storage Corporation
X35 PB-F POWER MOS...
RFQ
323
In-stock
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TK3R9E10PL,S1X Toshiba Electronic Devices and Storage Corporation
X35 PB-F POWER MOS...
RFQ
35,000
In-stock
Buy Now Get Quote
TK2R9E10PL,S1X Toshiba Electronic Devices and Storage Corporation
PB-F POWER MOSFET...
RFQ
35,000
In-stock
Buy Now Get Quote
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