Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Image Part Manufacturer Description Stock Action
TPCF8B01(TE85L,F,M Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 20V 2.7A...
RFQ
35,000
In-stock
Get Quote
TPCF8102(TE85L,F,M Toshiba Electronic Devices and Storage Corporation
MOSFET P-CH 20V 6A ...
RFQ
35,000
In-stock
Get Quote
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