- Drain to Source Voltage (Vdss)：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
2 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | G3 650V SIC-MOSFET ... |
161
In-stock
|
Buy Now Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | G3 1200V SIC-MOSFET... |
133
In-stock
|
Buy Now Get Quote |
