Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Supplier Device Package:
Image Part Manufacturer Description Stock Action
SSM3K116TU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 2.2A...
RFQ
1,411
In-stock
Buy Now Get Quote
IRF6201PBF International Rectifier
HEXFET POWER MOS...
RFQ
35,000
In-stock
Buy Now Get Quote
IRF6201TRPBF Infineon Technologies
MOSFET N-CH 20V 27A...
RFQ
35,000
In-stock
Get Quote
IRF6201PBF Infineon Technologies
MOSFET N-CH 20V 27A...
RFQ
35,000
In-stock
Buy Now Get Quote
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