Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Operating Temperature:
Package / Case:
Power Dissipation (Max):
Product Status:
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
FCP4N60 onsemi
MOSFET N-CH 600V 3.9...
RFQ
524
In-stock
Buy Now Get Quote
R6009KNX ROHM Semiconductor
MOSFET N-CH 600V 9A...
RFQ
486
In-stock
Buy Now Get Quote
R6009KNXC7G ROHM Semiconductor
600V 9A TO-220FM, HIG...
RFQ
1,000
In-stock
Buy Now Get Quote
TK4A60DB(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 3.7...
RFQ
35,000
In-stock
Get Quote
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