Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
STD4NK80ZT4 STMicroelectronics
MOSFET N-CH 800V 3A...
RFQ
35,000
In-stock
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IRF630NSTRLPBF Infineon Technologies
MOSFET N-CH 200V 9.3...
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35,000
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IRF630NSPBF International Rectifier
HEXFET POWER MOS...
RFQ
35,000
In-stock
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IRF630NS Infineon Technologies
MOSFET N-CH 200V 9.3...
RFQ
35,000
In-stock
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IRF630NSTRR Infineon Technologies
MOSFET N-CH 200V 9.3...
RFQ
35,000
In-stock
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IRF630NSPBF Infineon Technologies
MOSFET N-CH 200V 9.3...
RFQ
35,000
In-stock
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IRF630NSTRRPBF Infineon Technologies
MOSFET N-CH 200V 9.3...
RFQ
35,000
In-stock
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