- Manufacturer：
-
- EPC (1)
- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- FET Feature：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Mounting Type：
-
- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Technology：
-
- Vgs (Max)：
-
- Vgs(th) (Max) @ Id：
-
13 Records
| Image | Part | Manufacturer | Description | Stock | Action | |
|---|---|---|---|---|---|---|
|
EPC | GANFET N-CH 200V 5A... |
38,057
In-stock
|
Buy Now Get Quote | ||
|
|
ROHM Semiconductor | 800V 1.6A, TO-220FM, HI... |
965
In-stock
|
Buy Now Get Quote | ||
|
|
ROHM Semiconductor | HIGH-SPEED SWITC... |
466
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 3.7... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.3... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | CONSUMER |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.4... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.4... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.4... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.3... |
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.3... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.4... |
35,000
In-stock
|
Buy Now Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 2.3... |
35,000
In-stock
|
Buy Now Get Quote |
