BSM400D12P2G003
- Mfr.Part #
- BSM400D12P2G003
- Manufacturer
- ROHM Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- SILICON CARBIDE POWER MODULE. B
- Stock
- 35000
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 400A (Tc)
- Drain to Source Voltage (Vdss) :
- 1200V (1.2kV)
- FET Feature :
- Silicon Carbide (SiC)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- -
- Input Capacitance (Ciss) (Max) @ Vds :
- 38000pF @ 10V
- Mounting Type :
- -
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Power - Max :
- 2450W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- -
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- 4V @ 85mA
- Datasheets
- BSM400D12P2G003
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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:Offer design support and engineering solutions.
Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.Manufacturer related products
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