G3R160MT12J

Mfr.Part #
G3R160MT12J
Manufacturer
GeneSiC Semiconductor
Package/Case
-
Datasheet
Download
Description
SIC MOSFET N-CH 22A TO263-7
Stock
1895

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Manufacturer :
GeneSiC Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
22A (Tc)
Drain to Source Voltage (Vdss) :
1200 V
Drive Voltage (Max Rds On, Min Rds On) :
15V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
28 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds :
730 pF @ 800 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Power Dissipation (Max) :
128W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
192mOhm @ 10A, 15V
Supplier Device Package :
TO-263-7
Technology :
SiCFET (Silicon Carbide)
Vgs (Max) :
±15V
Vgs(th) (Max) @ Id :
2.69V @ 5mA
Datasheets
G3R160MT12J

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