IPI072N10N3G

Mfr.Part #
IPI072N10N3G
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
OPTLMOS N-CHANNEL POWER MOSFET
Stock
11000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drain to Source Voltage (Vdss) :
100 V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
4910 pF @ 50 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max) :
150W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
7.2mOhm @ 80A, 10V
Supplier Device Package :
PG-TO262-3-1
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.5V @ 90µA
Datasheets
IPI072N10N3G

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

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