RFD4N06L

Mfr.Part #
RFD4N06L
Manufacturer
Harris Corporation
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
1424

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Manufacturer :
Harris Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drain to Source Voltage (Vdss) :
60 V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max) :
30W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
600mOhm @ 1A, 5V
Supplier Device Package :
I-Pak
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Datasheets
RFD4N06L

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

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