BSB008NE2LXXUMA1

Mfr.Part #
BSB008NE2LXXUMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 25V 46A/180A 2WDSON
Stock
123

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
46A (Ta), 180A (Tc)
Drain to Source Voltage (Vdss) :
25 V
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
343 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
16000 pF @ 12 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
3-WDSON
Power Dissipation (Max) :
2.8W (Ta), 89W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
0.8mOhm @ 30A, 10V
Supplier Device Package :
MG-WDSON-2, CanPAK M™
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
2V @ 250µA
Datasheets
BSB008NE2LXXUMA1

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