IPD60R360PFD7SAUMA1

Mfr.Part #
IPD60R360PFD7SAUMA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 650V 10A TO252-3
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
534 pF @ 400 V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
43W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
360mOhm @ 2.9A, 10V
Supplier Device Package :
PG-TO252-3-344
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 140µA
Datasheets
IPD60R360PFD7SAUMA1

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

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