IRF442

Mfr.Part #
IRF442
Manufacturer
Harris Corporation
Package/Case
-
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
35000

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Manufacturer :
Harris Corporation
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
7A (Tc)
Drain to Source Voltage (Vdss) :
500 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1225 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-204AA, TO-3
Power Dissipation (Max) :
125W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
1.1Ohm @ 4.4A, 10V
Supplier Device Package :
TO-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
IRF442

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

Offer design support and engineering solutions.

Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

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