TSM4NB60CH X0G

Mfr.Part #
TSM4NB60CH X0G
Manufacturer
Taiwan Semiconductor
Package/Case
-
Datasheet
Download
Description
MOSFET N-CHANNEL 600V 4A TO251
Stock
35000

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Manufacturer :
Taiwan Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
4A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
500 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-251-3 Stub Leads, IPak
Power Dissipation (Max) :
50W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
2.5Ohm @ 2A, 10V
Supplier Device Package :
TO-251 (IPAK)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Datasheets
TSM4NB60CH X0G

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

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Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

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