IPI65R660CFDXKSA1

Mfr.Part #
IPI65R660CFDXKSA1
Manufacturer
Infineon Technologies
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 650V 6A TO262-3
Stock
35000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
615 pF @ 100 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max) :
62.5W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
660mOhm @ 2.1A, 10V
Supplier Device Package :
PG-TO262-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 200µA
Datasheets
IPI65R660CFDXKSA1

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